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79LV0832
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM
Memory
FEATURES:
* 256k x 32-bit EEPROM MCM * RAD-PAK(R) radiation-hardened against natural space radiation * Total dose hardness: - >100 krad (Si) - Dependent upon orbit * Excellent Single event effects - SELTH > 84.7 MeV/mg/cm2 - SEU > 26.6 MeV/mg/cm2 read mode - SEU = 11.4 MeV/mg/cm2 write mode * High endurance - 10,000 cycles/dword, 10 year data retention * Page Write Mode: 2 X 128 dword page * High Speed: - 200 and 250 ns maximum access times * Automatic programming - 15 ms automatic Page/dword write
DESCRIPTION:
Maxwell Technologies' 79LV0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies' patented radiation-hardened RAD-PAK(R) MCM packaging technology, the 79LV0832 is the first radiation-hardened 8 megabit MCM EEPROM for space application. The 79LV0832 uses eight 1 Megabit high speed CMOS die to yield an 8 megabit product. The 79LV0832 is capable of in-system electrical dword and page programmability. It has a 128 x 32 byte page programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79LV0832, hardware data protection is provided with the RES pin. Software data protection is implemented using the JEDEC standard algorithm. Maxwell Technologies' patented RAD-PAK(R) packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK(R)` provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to MAxwell Technologies self-defined Class K.
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(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
Memory
TABLE 1. 79LV0832 PINOUT DESCRIPTION
PIN 84-77, 29-37 48-55, 66-73, 96, 1-7, 18-25 61 41, 43 45 10, 17, 28, 40, 44, 58, 65, 76, 87, 93 8, 9, 11-16, 26, 27, 38, 42, 46, 56, 57, 59, 60, 62-64, 74, 75, 85, 86, 88-92, 94, 95 39 47 SYMBOL ADDR0 to ADDR16 I/O0 to I/O31 OE CE0-1 WE 3.3V GND DESCRIPTION Address Input Data Input/Output Output Enable Chip Enable 0 through 1 Write Enable Power Supply Ground
RDY/BUSY RES
Ready/Busy Reset
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
TYP MAX 7.0 7.0 45 38 3
C/W
TABLE 2. 79LV0832 ABSOLUTE MAXIMUM RATINGS
PARAMETER Supply Voltage Input Voltage Package Weight Thermal Impedance (RP and RT Packages; XP TBD) Operating Temperature Range Storage Temperature Range 1. VIN min = -3.0V for pulse width <50ns. SYMBOL VCC VIN RP RT FJC TOPR TSTG -55 -65 MIN -0.6 -0.51 UNIT V V Grams
125 150
C C
TABLE 3. 79LV0832 RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Supply Voltage Input Voltage RES_PIN Operating Temperature Range 1. VIL min = -1.0V for pulse width < 50 ns SYMBOL VCC VIL VIH VH TOPR MIN 3.0 -0.31 2.2 VCC-0.5 -55 MAX 3.6 0.8 VCC +0.3 VCC +1 125 UNIT V V V V
C
Memory
TABLE 4. DELTA LIMITS1
PARAMETER ICC1A ICC2A ICC2C ILI - ADDR, CE, OE, WE VARIATION2 +/- 10 % +/- 10 % +/- 10 % +/- 10 %
ILo - D0 - D31 +/- 10 % 1. Delta limits are calculated from test data taken at preburn-in and post burn-in as defined in MIL-STD-883 2. Specified value in Table 6
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 5. 79LV0832 CAPACITANCE
(TA = 25 C, f = 1 MHz) PARAMETER Input Capacitance: VIN = 0V1 SYMBOL CIN CIN OE CIN WE CIN CE0-1 CIN A0-A16 CIN RES Output Capacitance: VOUT = 0V1 COut RDY/BSY CO ut D0-D31 1. Guaranteed by design. MIN ---------
79LV0832
MAX 6 6 6 6 6 48 6 12 pF UNIT pF
TABLE 6. 79LV0832 DC ELECTRICAL CHARACTERISTICS
(VCC = 3.3V 10%, TA = -55 TO +125C)
Memory
PARAMETER
TEST CONDITION
SYMBOL ILI
SUBGROUPS 1, 2, 3
MIN --
MAX 42 7202 7202
UNITS A A A A A A mA mA mA
Input Leakage Current1 VIN = VCC A0-A16, CE,WE, OE Input Leakage Current D0-D31 Standby VCC Current1 VIN=VIH VIN=0V VIN=VCC
ILI ILO ICC1A ICC1B ICC1C ICC2A
1, 2, 3 1, 2, 3 1, 2, 3 ----1, 2, 3
4 4 80 15 15 24
Output Leakage Current (VCC = 3.6V, VOUT = 3.6V/0.4V) CE = ADDR=WE=OE =VCC CE = ADDR=WE=OE =VIH CE = VIH; ADDR=WE=OE =0V Operating VCC Current1,3 OE = 0V; ADDR=WE=VCC IOUT = 0mA, CE Duty = 100%, Cycle = 1 us at VCC = 3.6V OE =ADDR=WE=0V IOUT = 0mA, CE Duty = 100%, Cycle = 1 us at VCC = 3.6V OE = 0V; ADDR=WE=VCC IOUT = 0mA, CE Duty = 100%, Cycle = 200 ns at VCC =3.6V OE =ADDR=WE=0V IOUT = 0mA, CE Duty = 100%, Cycle = 200 ns at VCC = 3.6V Input Voltage
ICC2B
1, 2, 3
--
40
mA
ICC2C
1, 2, 3
60
mA
ICC2D
1, 2, 3
--
100
mA
VIL VIH RES_PIN VH
1, 2, 3 2.2 VCC -0.5
0.8
V
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 6. 79LV0832 DC ELECTRICAL CHARACTERISTICS
(VCC = 3.3V 10%, TA = -55 TO +125C) PARAMETER Output Voltage TEST CONDITION SYMBOL SUBGROUPS MIN --
79LV0832
MAX 0.4 0.4 --UNITS V V V V V
VOL Data Lines: VCCMin, IOL = 2.1mA 1, 2, 3 RDY/BSY_Line: VCC Min, IOL = 12mA VOL Data Lines: VCC Min, IOH = -400 A VOH RDY/BSY_Line: VCC Min, IOH = -12mA VOH All Outputs: VCCMin, IOH=-100uA 1. All Inputs are tied to Vcc with a 5.5KW resistor, except for RES which is 30KW. 2. For RES ILI=800uA max. 3. Only one CE active (low) at a time
2.4 2.4 VCC-0.3V
TABLE 7. 79LV0832 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
(VCC = 3.3V 10%, TA = -55 TO +125C) PARAMETER Address Access Time CE = OE = VIL, WE = VIH -200 -250 Chip Enable Access Time OE = VIL, WE = VIH -200 -250 Output Enable Access TIme CE = VIL, WE = VIH -200 -250 Output Hold to Address Change CE = OE =VIL, WE = VIH -200 -250 Output Disable to High-Z 2 CE = VIL, WE = VIH -200 -250 CE = OE = VIL, WE = VIH -200 -250 RES to Output Delay CE = OE = VIL, WE = VIH3 -200 -250 SYMBOL tACC SUBGROUPS 9, 10, 11 --tCE 9, 10, 11 --tOE 9, 10, 11 0 0 tOH 9, 10, 11 0 0 9, 10, 11 tDF 0 0 tDFR 0 0 TRR 9, 10, 11 0 0 525 550 300 350 ns 50 50 ns ns --110 120 ns 200 250 ns 200 250 ns MIN MAX UNIT ns
Memory
1. Test conditions: input pulse levels = 0.4V to 2.2V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including scope and jig); reference levels for measuring timing = 0.8 V/1.8 V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design.
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
TABLE 8. 79LV0832 AC ELECTRICAL CHARACTERISTICS PAGE/DWORD ERASE AND PAGE/DWORD WRITE OPERATION
(VCC = 3.3V 10%, TA = -55 TO +125C) PARAMETER Address Setup Time -200 -250 Chip Enable to Write Setup Time (WE controlled) -200 -250 Write Pulse Width CE controlled -200 -250 WE controlled -200 -250 Address Hold Time -200 -250 Data Setup Time -200 -250 Data Hold Time -200 -250 Chip Enable Hold Time (WE controlled) -200 -250 Write Enable to Write Setup Time (CE controlled) -200 -250 Write Enable Hold Time (CE controlled) -200 -250 Output Enable to Write Setup Time -200 -250 Output Enable Hold Time -200 -250 Write Cycle Time 2 -200 -250 SYMBOL tAS SUBGROUPS 9, 10, 11 0 0 tCS 9, 10, 11 0 0 9, 10, 11 tCW 200 250 tWP 200 250 tAH 9, 10, 11 200 250 tDS 9, 10, 11 150 200 tDH 9, 10, 11 10 10 tCH 9, 10, 11 0 0 tWS 9, 10, 11 0 0 tWH 9, 10, 11 0 0 tOES 9, 10, 11 0 0 tOEH 9, 10, 11 0 0 tWC 9, 10, 11 --15 15 --ms --ns --ns --ns --ns --ns --ns --ns --ns --ns ns ----ns MIN 1 MAX UNITS ns
Memory
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
TABLE 8. 79LV0832 AC ELECTRICAL CHARACTERISTICS PAGE/DWORD ERASE AND PAGE/DWORD WRITE OPERATION
(VCC = 3.3V 10%, TA = -55 TO +125C) PARAMETER Data Latch Time -200 -250 Byte Load Window -200 -250 Byte Load Cycle -200 -250 Time to Device Busy -200 -250 Write Start Time 3 -200 -250 RES to Write Setup Time4 -200 -250 VCC to RES Setup Time4 -200 -250 1. Use this device in a longer cycle than this value. 2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used. 4. Guaranteed by desgin. SYMBOL tDL SUBGROUPS 9, 10, 11 700 750 tBL 9, 10, 11 100 200 tBLC 9, 10, 11 1 1 tDB 9, 10, 11 100 120 tDW 9, 10, 11 250 250 tRP 9, 10, 11 100 100 tRES 9, 10, 11 1 1 ----s --s --ns 30 30 ns --s --s MIN 1 MAX UNITS ns
Memory
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 9. 79LV0832 MODE SELECTION 1, 2
PARAMETER Read Standby Write Deselect Write Inhibit Data Polling Program Reset 1. X = Don't care. 2. Refer to the recommended DC operating conditions. 3. For CE0-1 only one CE can be enabled (Low) at a time. CE 3 VIL VIH VIL VIL X X VIL X OE VIL X VIH VIH X VIL VIL X WE VIH X VIL VIH VIH X VIH X I/O DOUT High-Z DIN High-Z --Data Out (I/O7) High-Z
79LV0832
RES VH X VH VH X X VH VIL RDY/BUSY VOH VOH VOH --> VOL VOH --VOL VOH
Memory
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM FIGURE 1. READ TIMING WAVEFORM
79LV0832
High
Memory
FIGURE 2. DWORD WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
FIGURE 3. DWORD WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
Memory
FIGURE 4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)1,2
Memory
1) A7-A16 ARE PAGE ADDRESSES AND MUST BE THE SAME WITHIN A PAGE WRITE OPERATION
2) REFER TO TABLE 7 AND 8 FOR TIMING CHARACTERISTICS
FIGURE 6. DATA POLLING TIMING WAVEFORM1
I/O7, 15, 23, 31 1) REFER TO TABLE 7 AND 8 FOR TIMING CHARACTORISTICS
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM (1) (IN PROTECTION MODE)1
1)REPEAT THE DATA PATTERN IN EACH OF THE FOUR BYTES.
Memory
FIGURE 8. SOFTWARE DATA PROTECTION WAVEFORM (2) (IN NON-PROTECTION MODE)1
1) REPEAT THE DATA PATTERN IN EACH OF THE FOUR BYTES.
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data integrity.
Automatic Page Write
Page-mode write feature allows 1 to 128 dwords of data to be written into the EEPROM in a single write cycle. Loading the first dword of data, the data load window opens 30 s for the second dword. In the same manner each additional dword of data can be loaded within 30 s of the preceding falling edge of either WE or CE. When CE and WE are kept
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
high for 100 s after data input, the EEPROM enters the write mode automatically and the data input is written into the EEPROM.
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last dword of data to be loaded outputs from I/O 7, 15, 23, 31 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal goes low (VOL) after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state ( VOH).
RES Signal
Memory
When RES is LOW (VL), the EEPROM cannot be read or programmed. The EEPROM data must be protected by keeping RES low when VCC is power on and off. RES should be high (VH) during read and programming operations.
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection at VCC on/off
When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in an unprogrammable state during VCC on/off by using a CPU reset signal to RES pin.
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.
Memory
2. RES Signal
RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn't finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data is input
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
.
79LV0832
15mS
3. Software Data Protection Enable
The 79LV0832 contains a software controlled write protection feature that allows the user to inhibit all write operations to the device. This is useful in protecting the device from unwanted write cycles due to uncontrollable circuit noise or inadvertent writes caused by minor bus contentions. Software data protection is enabled by writing the following data sequence to the EEPROM and allowing the write cycle period (tWC) of 10ms to elapse: .
Memory
Software Data Protection Enable Sequence Address
5555 AAAA or 2AAA 5555
Data
AA AA AA AA
55 55 55 55
A0 A0 A0 A0
4. Writing to the Memory with Software Data Protection Enabled
To write to the device once Software protection is enabled, the enable sequence must precede the data to be written. This sequence allows the write to occur while at the same time keeping the software protection enabled
Sequence for Writing Data with Software Protection Enabled. Address
5555 AAAA or 2AAA 5555 Write Address(s)
Data
AA AA AA AA 55 55 55 55 A0 A0 A0 A0 Normal Data Input
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
5. Disabling Software Protection
Software data protection mode can be disabled by inputting the following data sequence. Once the software protection sequence has been written, no data can be written to the memory until the write cycle (TWC) has elapsed.
Software Protection Disable Sequence Address
5555 AAAA or 2AAA 5555 5555 AAAA or 2AAA 5555
Data
AA AA AA AA 55 55 55 55 80 80 80 80 AA AA AA AA 55 55 55 55 20 20 20 20
Memory
Devices are shipped in the "unprotected" state, meaning that the contents of the memory can be changed as required by the user. After the software data protection is enabled, the device enters the Protect Mode where no further write commands have any effect on the memory contents.
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
Memory
96-PIN RAD-PAK(R) QUAD FLAT PACKAGE
SYMBOL MIN A b c D D1 e S1 L L1 L2 A1 N --2.485 --.152 .184 .010 --1.408 DIMENSION NOM .200 .012 .009 1.420 1.162 .050 .129 2.528 2.500 1.700 .165 96 .178 2.543 2.505 MAX .216 .013 .012 1.432
Note: All dimensions in inches
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
Pin #1 ID
A1 c
S1
MAXWELL
TECHNOLOGIES
e
L2 b
Memory
D1 D(sq) L1(sq) L(sq)
A
96 PIN RAD-TOLERANT QUAD FLAT PACKAGE
SYMBOL MIN A b c D D1 e S1 L L1 L2 A1 N -2.485 -.152 .167 .010 -1.408 DIMENSION NOM .183 .012 .009 1.420 1.162 .050 .129 2.528 2.500 1.700 .165 96 2.543 2.505 -.178 MAX .199 .013 .012 1.432
Note: All dimensions in inches
All data sheets are subject to change without notice
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
Memory
96 PIN XRAY QUAD FLAT PACKAGE
SYMBOL MIN A b c D D1 e S1 L L1 L2 A1 N 3.000 2.985 2.090 .115 .200 .007 .009 1.690 DIMENSION NOM .222 .010 .009 1.707 1.150 0.050 .278 3.020 3.000 2.200 .130 96 3.040 3.005 2.210 .145 MAX .245 .013 .012 1.725
Note: All dimensions in inches
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
Important Notice:
79LV0832
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies' products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies' liability shall be limited to replacement of defective parts.
Memory
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(c)2005 Maxwell Technologies All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM Product Ordering Options
79LV0832
Model Number
79LV0832
XX
Q
X
-XX
Feature Access Time
Option Details
20 = 200 ns 25 = 250 ns
Screening Flow
Multi Chip Module (MCM)1 K = Maxwell Self-Defined Class K H = Maxwell Self-Defined Class H I = Industrial (testing @ -55C, +25C, +125C) E = Engineering (testing @ +25C)
Memory
Package
Q = Quad Flat Pack
Radiation Feature
RP = RAD-PAK(R) Package XP = XRAY-PAK Package RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at
Base Product Nomenclature
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM
1) Products are manufactured and screened to Maxwell Technologies self-defined Class H and Class K flows.
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(c)2005 Maxwell Technologies All rights reserved

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